One of the most significant technological applications of LB films for the goals of microelectronics is the production of super thin high sensitive plasma resistant UV and electron beam resists. Cyanoacrylates are very perspective materials among the compounds used for deposition of LB resists. The sensitivity of some polycyanoacrylate electron beam resists reaches the value of 10-7 C/cm2.
Introduction of several groups containing Si atoms into hydrophobic tail increases the stability of the film to plasma etching to such an extent to enable the usage of 10 nm thick layer in real technological processes.
When using polycyanoacrylate films as UV resists, the LB technique gives the possibility to deposit an LB layer of sensitizer over the resist layer and to attain in this way a satisfactory sensitivity and the value of contrast of 1.5 with the thickness of the resist film of 50-60 nm.


Referencies:

V.I.Troitsky and N.K.Matveeva. - Polycyanoacrylate Electron Beam Resists Deposited by Langmuir-Schaefer Technique. - Thin Solid Films, (1998), 327-329, 659-662.

T.S.Berzina, V.I.Troitsky, V.Castelvetro, M.P.Fontana. - Electron beam sensitive LB films of fluorocarbon polymer. - Materials Science & Engineering, (2002), C 22, 295-299.








SEM images of dense-lines patterns in polycyanoacrylate LB film
with lateral dimensions of 2 mm (a), 1 mm (b), 500 and 400 nm (c) and 300nm (d).




Etched Cromium dense patterns with the resolution up to 400 nm
(a, AFM image), and a single line with the width of 300 nm (b, SEM image).




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